Open AccessLanthanide doping of AIIIBV crystals
Author(s) -
V. V. Romanov,
B. S. Ermakov,
Vadim Andreevich Kozhevnikov,
K. F. Stelmakh,
S. A. Vologzhanina
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/826/1/012010
Subject(s) - polaron , doping , impurity , lanthanide , rare earth , materials science , semiconductor , crystallography , polarization (electrochemistry) , atomic physics , condensed matter physics , analytical chemistry (journal) , chemistry , physics , ion , nuclear physics , optoelectronics , electron , organic chemistry , metallurgy , chromatography
The state of rare earth impurities at concentrations of about 10 18 cm −3 in volume-doped A III B V semiconductor crystals can be described in the framework of the model of quasi-molecular rare earth centers of Ln 2 O 3 type and spontaneous polarization regions-coupled spin-polarons localized on small donors.