Open AccessEffect of por-SiC buffer layer on the parameters of thin Er2O3 layers on silicon carbide substrates
Author(s) -
Yu. Yu. Bacherikov,
Р. В. Конакова,
О.Б. Охрименко,
Nataliya Berezovska,
Л. М. Капитанчук,
A. M. Svetlichnyi,
L. A. Svetlichnaya
Publication year - 2015
Publication title -
iop conference series materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/81/1/012019
Subject(s) - materials science , silicon carbide , buffer (optical fiber) , layer (electronics) , oxide , annealing (glass) , silicon , silicon oxide , auger , carbide , erbium , analytical chemistry (journal) , optoelectronics , doping , composite material , metallurgy , chemistry , telecommunications , silicon nitride , physics , atomic physics , chromatography , computer science
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