Open AccessQuantum Hall Effect in Trilayer Graphene
Author(s) -
J. Brahma,
S. Sahoo
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/798/1/012035
Subject(s) - graphene , quantum hall effect , landau quantization , condensed matter physics , quantum spin hall effect , monolayer , quantum , physics , materials science , quantum mechanics , nanotechnology , magnetic field
Graphene is a two-dimensional sheet of carbon atoms with properties that are superior to other materials. Due to these superior properties, a lot of research is being done with this material. One of those properties is the Quantum Hall Effect (QHE). Monolayer graphene shows very interesting behaviour in the presence of a high magneticfield (up to 30T) and at very low temperature (~0.2K). Its unconventional Landau Level (LL) spectrum of massless Diracfermions leads to a new type of quantum Hall effect, known as half-integer quantum Hall effect or anomalous QHE. We expect uniqueresults can also be seen in trilayer graphene (TLG).In this work, we study the integer quantum Hall effect in trilayer graphene theoretically.