Open AccessRole of polarization electric field on thermal conductivity of GaN/In0.9Ga0.1N/GaN superlattices
Author(s) -
Subhranshu Sekhar Sahu,
Bijay Kumar Sahoo
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/798/1/012027
Subject(s) - superlattice , seebeck coefficient , thermal conductivity , materials science , electric field , polarization (electrochemistry) , electrical resistivity and conductivity , condensed matter physics , thermoelectric effect , conductivity , optoelectronics , chemistry , thermodynamics , physics , composite material , quantum mechanics
Enhancement in thermoelectric efficiency of GaN/In 0.9 Ga 0.1 N/GaN superlattice (SL) needs higher electrical conductivity ( σ ) and Seebeck coefficient ( S ); but lower thermal conductivity ( k ). Both S and σ are improved due to the presence of polarization electric field (PEF) of this SL. In this work, the role of PEF on k of SL has been investigated and found that cross-plane and in-plane k are reduced due to PEF upto a certain temperature. Both cross-plane and in-plane thermal conductivities in the presence of PEF show cross over temperature termed as transition temperature( T c ). It is noted the T c for cross-plane and in-plane thermal conductivity of GaN/In 0.9 Ga 0.1 N superlattice (SL) are 510K and 530K, respectively which depends on In contents. Thus, the preferred value of S, σ and k of GaN/In 0.9 Ga 0.1 N SL can be achieved as per requirement by changing In content; making it suitable for TE module for maximum power production at room temperature and above.