Open AccessEffect of temperature on electron leakage and efficiency droop of AlxGa1-xN UV LED
Author(s) -
Priyanka Sahare,
Bijay Kumar Sahoo
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/798/1/012018
Subject(s) - voltage droop , leakage (economics) , optoelectronics , materials science , electron , recombination , auger effect , electron beam processing , auger electron spectroscopy , chemistry , electrical engineering , physics , biochemistry , voltage , gene , nuclear physics , economics , voltage divider , macroeconomics , engineering , quantum mechanics
Al x Ga 1-x N UV LED is a promising light source for water purification, diagnosis and sterilization of medical equipment’s, document authentication, security checking and general lightings. The device suffers from efficiency droop due to a number of factors like Shockley Read Hall recombination (SRH), Auger recombination (AR), electron delocalization (ED) and electron leakage (EL).In this work, effect of temperature on electron leakage and efficiency droop of AlGaN UV LED is investigated. It is found that electron leakage takes place at high injection current and high temperature. Electron leakage can be reduced by minimizing self-heating effect in the AlGaN UV LED.