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Theoretical study of electronic properties of nitrogen doped carbon nanotubes
Author(s) -
Fatimaezzahrae Allali,
H. Chadli,
Abdelali Rahmani
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/783/1/012015
Subject(s) - carbon nanotube , materials science , doping , nitrogen , metal , nanotube , carbon fibers , electronic structure , chemical physics , nanotechnology , computational chemistry , chemistry , optoelectronics , composite material , organic chemistry , composite number , metallurgy
In this work, we have studied the effects of nitrogen (N) substitutional doping on the electronical properties of single wall carbon nanotube (SWCNT). The electronic density of states (eDOS) of these nanosystems has been calculated in the framework of tight-binding calculations method. The obtained results show that the semiconducting SWCNT could be a quasi-metallic one after N-substitution. We conclude that electronic properties of the N-doped nanotubes (SWCNNT) are sensitive not only to the concentration of nitrogen atoms but also to their distribution on the nanotube surface. Our main results are discussed in the light of the experimental data.

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