Open AccessStudy of a Fast Over-Current Protection Based on Bus Voltage Drop for Gallium Nitride Power Device
Author(s) -
Yang Zhou,
Zhijun Bai,
Xuerui Gong
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/782/2/022085
Subject(s) - materials science , overcurrent , gallium nitride , insulated gate bipolar transistor , high electron mobility transistor , transistor , optoelectronics , silicon carbide , electrical engineering , power semiconductor device , voltage drop , voltage , engineering , nanotechnology , layer (electronics) , metallurgy
Due to the low threshold voltage, gallium nitride (GaN) high electron mobility transistor (HEMT) is prone to mis-conduction. Meanwhile, compared with silicon (Si) insulated gate bipolar transistors (IGBT) and silicon carbide (SiC) metal- oxide- semiconductor field effect transistor(MOSFET) devices, GaN HEMT have a shorter short-circuit withstand time at highvoltages, only a few hundred nanoseconds, which leads to a serious challenge to overcurrent protection. Traditional inductor detection and desaturation overcurrent detection have a long execution time, which are no longer suitable for over-current protection of GaN. Therefore, this paper proposes a new fast over-current protection method, which is based on the bus voltage drop. Through simulation and experimental verification, the result proves that the proposed protection method can detect the over-current signal within 100ns and turn off the GaN device within 400 ns, achieving fast and reliable over-current protection.