Open AccessInfluence of Deposited Material Energy on Superconducting Properties of the WSi Films
Author(s) -
Д.Д. Васильев,
E. I. Malevannaya,
Konstantin Moiseev,
Philipp Zolotov,
A.V. Antipov,
Yu. B. Vakhtomin,
K. Smirnov
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/781/1/012013
Subject(s) - substrate (aquarium) , materials science , biasing , amorphous solid , tungsten , superconductivity , optoelectronics , sputtering , sputter deposition , thin film , high energy particle , condensed matter physics , nanotechnology , engineering physics , voltage , chemistry , crystallography , electrical engineering , metallurgy , oceanography , physics , geology , engineering
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.