Open AccessResearch of the influence of vacuum deposition on the growth rate of MoS2 films
Author(s) -
A I Belikov,
V N Kalinin,
А.В. Сиков
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/781/1/012005
Subject(s) - argon , materials science , molybdenum disulfide , sputter deposition , sputtering , silicon , growth rate , thin film , cavity magnetron , molybdenum , deposition (geology) , metallurgy , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , environmental chemistry , geology , paleontology , geometry , mathematics , organic chemistry , sediment
The research results of the working pressure and discharge power influence on the growth rate of molybdenum disulfide thin films on silicon substrates during magnetron sputtering of the target in vacuum are presented. Based on experimental data, an empirical model has been developed that relates the film growth rate to argon pressure and discharge power on a magnetron sputtering system.