
Analysis of Electrostatic Driven Micromachined Gyroscope
Author(s) -
Runyu Jiao,
Zhaomin Luo,
Jianming Wang,
Xin Xu
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/772/1/012044
Subject(s) - gyroscope , microelectromechanical systems , vibrating structure gyroscope , vibration , voltage , acceleration , acoustics , transimpedance amplifier , amplifier , angular velocity , accelerometer , physics , surface micromachining , engineering , electrical engineering , optoelectronics , fabrication , operational amplifier , cmos , aerospace engineering , medicine , alternative medicine , classical mechanics , quantum mechanics , pathology
Micromechanical gyroscopes are an important inertial instrument used to measure the angular or angular acceleration of an object. China’s research in this field lags behind that of developed countries in the West. The research on the core components of high-performance micromachined gyroscopes is still in its infancy. In this paper, a fully symmetrical multi-ring vibration structure electrostatically driven micromachined gyroscope is proposed, which is studied from the theoretical basis, working principle, structural design, performance simulation, processing technology and device testing, including the following electrostatic drive micro Testing of mechanical resonant devices. The test methods of several main MEMS resonant devices are analyzed. Based on vector network analyzer, vacuum cavity, transimpedance amplifier and other equipment, the frequency sweep test is performed on the device, and the resonant frequency of the drive shaft is 23686.2z. The resonant frequency of the sensitive axis is obtained. For the 23980 Hz based on the principle of electrostatic regulation, a 2.5V electrostatic adjustment voltage is applied to the device, and the frequency cracking of the two modes is reduced from 293.75 Hz to 6.25 Hz, which improves the performance of the device.