Open Access60 GHz Low-Noise Amplifier for Detection Systems
Author(s) -
Pape Sanoussy Diao
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/766/1/012003
Subject(s) - noise figure , low noise amplifier , amplifier , transistor , high electron mobility transistor , electrical engineering , power gain , noise (video) , electronic engineering , computer science , engineering , cmos , voltage , artificial intelligence , image (mathematics)
This paper presents a 60 GHz low-noise amplifier (LNA) to improve detection systems performance. The considered system is based on impulse radar technology. The LNA is designed in GaAs metamorphic High Electron Mobility Transistor (m-HEMT) technology. Three stages common source transistors are used with inductive degeneration for a good tradeoff between gain and noise. The post-layout simulation results show a noise factor of 2.06 dB and a gain of 14.5 dB at 60.2 GHz, for a power consumption of 13.5 mW. The simulated nonlinear characteristics show an IP 1 dB (Input 1 dB compression Point) of -10 dBm and an IIP 3 (Input third-order Intercept Point) of -4.4 dBm. The LNA occupies an area of 1.56 × 1.29 mm 2 .