Open AccessEffect of Alloy Composition on the Optoelectronic Properties of Hydrogenated Microcrystalline Silicon-Germanium Films Deposited with Various Hydrogen Dilution
Author(s) -
T. W. Li,
Yang Xu,
S. Y. Wang,
Yingda Yu,
Ying Ma,
Wenchao Niu
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/761/1/012005
Subject(s) - materials science , crystallization , dangling bond , microcrystalline , germanium , dilution , hydrogen , silicon , alloy , chemical vapor deposition , impurity , analytical chemistry (journal) , crystallography , volume fraction , chemical engineering , nanotechnology , optoelectronics , metallurgy , chemistry , organic chemistry , composite material , physics , engineering , thermodynamics
Hydrogenated microcrystalline silicon-germanium ( μ c-Si 1-x Ge x : H) films were fabricated by plasma-enhanced chemical vapor deposition. The influence of hydrogen dilution on the optoelectronic and crystal structural properties of μ c-Si 1-x Ge x : H films were investigated upon alloy composition. Under the relatively low hydrogen dilution condition, the Si atoms of films are easier to crystallize than the Ge atoms, and the dark and photo-conductivity decreased with the Ge concentration because of the reduced crystalline volume fraction of the Si atoms ( X Si-Si ) and the increased Ge dangling bond density. However, under higher hydrogen dilution condition, crystallization of the Si atoms decreased while crystallization of the Ge atoms increased with Ge incorporation, and the optoelectronic properties were strongly influenced by the defect density and crystallization of Ge atoms in films.