Open AccessGrowth and infrared switching properties of deposited VO2 films at various sputtering power with a VO2 target by RF magnetron sputtering
Author(s) -
Noormariah Muslim,
Ying Woan Soon,
Nyuk Yoong Voo
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/758/1/012019
Subject(s) - sputtering , crystallinity , materials science , sputter deposition , crystallite , hysteresis , transmittance , analytical chemistry (journal) , thin film , high power impulse magnetron sputtering , grain size , optoelectronics , composite material , metallurgy , chemistry , nanotechnology , condensed matter physics , physics , chromatography
In this work, structural and morphological properties as well as phase transition temperature and hysteresis width of VO 2 thin films grown with a VO 2 target by RF magnetron sputtering were studied under the influence of relatively low sputtering power of 80 – 140 W. It was observed that as sputtering power increased, the crystallinity of the films improved with the presence of obvious diffraction peaks of VO2, and a slight increase in the average crystallite and grain sizes of the films. The deposited films revealed a slight change in infrared transmittance during heating and cooling cycles. Films deposited at sputtering power of 140 W exhibited the lowest Tt of 60.5 °C with a hysteresis width of 41.0 °C.