Open AccessEffect of SiC on the dielectric and microwave absorption performance of F-doped Si3N4 ceramics in X-band
Author(s) -
Adil Saleem,
Yujun Zhang,
Hongyu Gong,
Muhammad K. Majeed,
Xiao Lin,
M. Zeeshan Ashfaq,
Xinfeng Zhang
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/758/1/012005
Subject(s) - materials science , ceramic , silicon carbide , silicon nitride , dielectric , sintering , doping , permittivity , microwave , dielectric loss , absorption (acoustics) , composite material , silicon , optoelectronics , physics , quantum mechanics
In this study, silicon carbide reinforced silicon nitride (SiC/Si 3 N 4 ) ceramics were fabricated by hot press (HP) sintering with the addition of fluorides (F=AlF 3 , MgF 2 ). In order to investigate the dielectric and microwave (MW) absorption properties of SiC/Si 3 N 4 ceramics in X-band, various concentrations of silicon carbide (SiC) have been used. The results demonstrate a complete phase transformation and the intergranular behavior of the SiC/Si 3 N 4 ceramics with large and irregular grains of β−Si 3 N 4 . The relative complex permittivity and dielectric loss tangent increase significantly with the increasing fraction of SiC. The Cole-Cole semicircle analysis for SiC/Si 3 N 4 ceramics shows a ternary dielectric behavior with the addition of SiC. Meanwhile, the reflection loss (R L ) decreases with the increase of SiC content and the lowest value of R L was achieved −8.2 dB at 12.4 GHz, which reveal a favorable prospect as MW absorbers.