Open AccessStructural, Morphological and Optical properties of n-type Porous Silicon-effect of Etching Current Density
Author(s) -
H. K. Abood,
Falah A.-H. Mutlak
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/757/1/012065
Subject(s) - porous silicon , materials science , silicon , etching (microfabrication) , anodizing , wafer , nanocrystalline silicon , porosity , current density , porous medium , layer (electronics) , refractive index , optoelectronics , composite material , crystalline silicon , aluminium , physics , quantum mechanics , amorphous silicon
Porous silicon layers have been prepared from n-type silicon wafers of (111) orientation. XRD, AFM, reflectivity and PL have been used to characterize the structural, morphological, and optical properties of porous silicon. The influence of varying etching current density in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching current density and attain maximum for 56 mA/cm 2 and then decreases. The PL spectrum peak shifts had been slight towards the higher energy side, which supports the quantum confinement effect in porous silicon. The reflectivity shows that the porous silicon surface lower reflectance which is due to the very thin layer of porous silicon and changed refractive index profile at the interface of the bulk silicon and porous silicon material.