Open AccessExploring the Optimal Growth Parameters of Al2O3Grown by Atomic Layer Deposition
Author(s) -
Shuping Li,
Zeqian Ren
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/746/1/012011
Subject(s) - atomic layer deposition , deposition (geology) , materials science , volumetric flow rate , growth rate , thin film , purge , surface roughness , analytical chemistry (journal) , layer (electronics) , dielectric , root mean square , chemistry , nanotechnology , optoelectronics , composite material , thermodynamics , electrical engineering , chromatography , physics , mathematics , paleontology , geometry , engineering , sediment , political science , law , biology
High quality Al 2 O 3 thin film is grown by atomic layer deposition (ALD). The influence of growth parameters such as growth temperature and purge time on the surface morphology, dielectric constant and so on have been investigated. It is found that Al 2 O 3 thin film at a flow rate of 150 sccm, H 2 O flow rate of 150 sccm, pulse time of 0.1 s, purge time of 6 s, cycle period of 450 times and growth temperature of 150°C, exhibits the optimal material quality with a growth rate of 0.79 Å/cycle, a root-square surface roughness (RMS) of 0.152 nm and a capacitance of 13.8 nf.