Open AccessComparison between The ultra-wide band gap semiconductor AlGaN and GaN
Author(s) -
Jiajie He
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/738/1/012009
Subject(s) - materials science , semiconductor , optoelectronics , wide bandgap semiconductor , band gap , electronics , engineering physics , electrical engineering , physics , engineering
The emergence of the ultra-wide band gap semiconductor, whose band gaps considerably wider than 3.4 eV (GaN), opens a new era in many fields because of their many superior property. The major material of the UWBG semiconductor is high Al-content AlGaN and the studies find these material have stunning strengths in ultra-high power and ratio-frequency electronics, deep-ultraviolet optoelectronics, quantum information and electronics for extreme-environment applications. In this article, by comparing GaN and ultra-wide band gap AlGaN, people can know the strengths of AlGaN, lacks of GaN and realize why AlGaN will replace GaN in some applications and why GaN will continually be used by people in some applications.