Open AccessRecent research on ohmic contacts on GaN-based materials
Author(s) -
Yuan Liu
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/738/1/012007
Subject(s) - ohmic contact , semiconductor , materials science , engineering physics , semiconductor materials , nanotechnology , optoelectronics , field (mathematics) , computer science , engineering , mathematics , layer (electronics) , pure mathematics
The most important components in most of the electronic products today, such as computers, mobile phones or digital recorders, are closely related to semiconductor. Semiconductors have a long history. Currently, there are some obstacles in the way of the further development of this material. Therefore, this paper mainly focuses on the ohmic contacts between metals and semiconductor with the help of recent research. In the end, a general conclusion is drawn on the electrical behavior of metal contacts on GaN for further advances in this field of GaN-based devices and materials.