Open AccessComparison between GaN and SiC for power switching transistor application
Author(s) -
Haoxiang Yu
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/738/1/012003
Subject(s) - fabrication , materials science , wide bandgap semiconductor , transistor , semiconductor , engineering physics , power semiconductor device , process (computing) , optoelectronics , thermal conductivity , semiconductor industry , silicon carbide , nanotechnology , power (physics) , computer science , electrical engineering , engineering , manufacturing engineering , metallurgy , composite material , physics , medicine , alternative medicine , pathology , quantum mechanics , voltage , operating system
Semiconductor has been widely used in industry ever since its invention and has experienced three generations. However, there are still many problems existing in the third generation semiconductors industry such as making process and cost. This paper mainly discusses the differences between GaN and SiC in material properties and fabrication process. Material properties include band-gap, critical field strength, carrier mobility, and thermal conductivity. For fabrication process, GaN is normally used homoepitaxy approach and SiC is used heteroepitaxy approach. The details in these two approaches are given in the paper.