Open AccessA monolithic integration scheme for GaN-based power converter integrated circuit using fully-Schottky versatile HEMTs
Author(s) -
Zeheng Wang,
Yi Luo,
Chao Chen,
Zhanzhuang Chen,
Xuewei Feng,
Yuanzhe Yao
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/733/1/012018
Subject(s) - schottky diode , ohmic contact , high electron mobility transistor , scheme (mathematics) , materials science , integrated circuit , transistor , electronic engineering , optoelectronics , gallium nitride , power (physics) , diode , electrical engineering , computer science , engineering , voltage , nanotechnology , physics , layer (electronics) , mathematics , mathematical analysis , quantum mechanics
A monolithic integration scheme for GaN-based power converter integrated circuit is proposed in this paper, wherein the scheme is based on a novel versatile HEMT architecture featuring full-Schottky contacts. By simply introducing only one type of device for building both field effect transistors and diodes, the power converter ICs could be realized in a compact way. In addition, this scheme avoids harmful high temperature process which is for forming ohmic contacts in some nitride semiconductors. In this sense, this scheme could significantly reduce the complexity of the integration, and therefore, promisingly enable higher device performance.