Open AccessA stable FHD display device based on BCE IGZO TFTs
Author(s) -
Guangmiao Wan,
Shi-Min Ge,
Cheng Gong,
S. Li,
Xinnan Lin
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/729/1/012099
Subject(s) - passivation , thin film transistor , materials science , optoelectronics , layer (electronics) , composite material
In this work, the impact of the deposition process of the SiOx passivation layer on the electrical properties of the BCE IGZO TFTs has been studied. The ΔVth of the TFTs are 2.52 and -1.67 V under PBTS (60°C, 30 V) and NBITS (60°C, -30 V, 4500 nit) after 1 hour, respectively. The stability of these TFTs is verified in 32in FHD display devices, which still could display the picture properly after the 500-hour aging test at 60°C and 90% humidity. A stable FHD display device based on BCE IGZO TFTs was achieved.