Open AccessEfficiency Enhancement of Perovskite CsPbBr3 Quantum Dot Light-emitting Diodes by Doped Hole Transport Layer
Author(s) -
Mengke Liu,
Weiling Luan,
Yihui Huang,
Shulv Zhang
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/729/1/012098
Subject(s) - perovskite (structure) , light emitting diode , diode , doping , optoelectronics , quantum dot , materials science , quantum efficiency , electron mobility , charge carrier , layer (electronics) , charge (physics) , nanotechnology , chemistry , physics , crystallography , quantum mechanics
Balanced charge injection is essential to high-performance Perovskite CsPbBr 3 quantum dot-based light-emitting diodes (QLEDs). However, low mobility of hole-transport materials (HTMs) severely restrict improving performance of QLEDs. Herein, we provide a novel HTMs to improve the highest occupied molecular orbital (HOMO) energy level structure and carrier mobility by doping poly (9-vinlycarbazole) (PVK) and poly [N, N’-bis(4-butylphenyl)-N, N’-bis(phenyl) benzi-dine] (poly-TPD). We also introduce poly (methyl methacrylate) (PMMA) as electron block layer to further achieve charge injection balance. Finally, an enhanced external quantum efficiency (EQE) of 0.53% and 414.83 cd/m 2 was obtained. Compared with the untreated QLED, this result has been 8-fold enhanced, provides a new approach to attain better performance.