Open AccessA Comparison between Si and SiC MOSFETs
Author(s) -
Jiawei Wang
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/729/1/012005
Subject(s) - mosfet , silicon carbide , materials science , power mosfet , power semiconductor device , engineering physics , transistor , optoelectronics , field effect transistor , power (physics) , electrical engineering , electronic engineering , engineering , voltage , metallurgy , physics , quantum mechanics
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has developed quickly and become one of the most important devices for a wide range of applications. There is an increasing need for power MOSFET devices with low power consumption and high energy efficiency. Silicon (Si) and Silicon Carbide (SiC) are two kinds of materials used in power MOSFET devices, which have their own advantages of performance for each use. This paper makes a comparison of the on-resistance and high-temperature performance between Si and SiC MOSFETs. The analysis of the differences between the two will mainly come out from the perspective of material properties, and the conclusion of what is the ideal material for power MOSFET devices will be finally drawn.