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GaN-based LEDs using Homo-Epitaxial technology and the Progress and Challenges of HVPE method
Author(s) -
Shuhang Tan
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/729/1/012004
Subject(s) - light emitting diode , epitaxy , materials science , optoelectronics , engineering physics , nanotechnology , physics , layer (electronics)

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