Open AccessSuggestions on Efficiency Droop of GaN-based LEDs
Author(s) -
Junyang Ding
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/729/1/012003
Subject(s) - voltage droop , light emitting diode , materials science , diode , optoelectronics , computer science , electrical engineering , engineering , voltage , voltage divider
InGaN/GaN-based light-emitting diodes (LEDs) are widely used in modern society and industry among different areas. However, InGaN/GaN LEDs suffer from an efficiency droop issue: The internal efficiency decreases during high current injection. The efficiency droop significantly affects the development of GaN-based LEDs devices in efficiency and light-output areas. Therefore, the improvement of the droop phenomenon has become a significant topic. This paper introduces several possible mechanisms of droop phenomenon based on different hypotheses including Auger Recombination, Carrier Delocalization and Electron Leakage. Furthermore, some proposals to mitigate efficiency droop, including semipolar LEDs, electron blocking layer(EBL), quaternary alloy and chip design will be discussed and analyzed. Also, it will provide some suggestions for the further optimization of droop phenomenon in each proposal.