Open AccessPulse measurements of small area thin film μc-Si:H/ZnO:B photodiodes
Author(s) -
Z. Remeš,
J. Stuchlı́k
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/726/1/012011
Subject(s) - photodiode , materials science , optoelectronics , diode , dark current , electroluminescence , silicon , light emitting diode , thin film , electrode , near infrared spectroscopy , current density , optics , photodetector , layer (electronics) , chemistry , nanotechnology , physics , quantum mechanics
We introduce a triggered optoelectronic system operating in a pulse mode in the near infrared and visible spectral range 0.75– eV. The system measures current-voltage (I-V) characteristics in dark and under visible light illumination as well as electroluminescence (EL) spectra of small area thin film photodiodes and light emitting diodes with size below 1 mm 2 . The usefulness of the setup is demonstrated by measurement of optoelectronic properties of a hydrogenated microcrystalline silicon μc-Si:H) p-i-n diode deposited on a semi-transparent nanostructured ZnO:B electrode. No s-shaped I-V characteristics were observed under white illumination near an open circuit voltage Uoc indicating a negligible charge accumulation near μc-Si:H/ZnO:B interface. The weak infrared EL correlates with the current density.