Open AccessA 20.5 dBm Outphasing Class-F PA with Chireix Architecture at 3.5 GHz for RF Transmitter Front-end
Author(s) -
Yusheng Sun,
Sichun Du
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/717/1/012013
Subject(s) - amplifier , dbc , cmos , electrical engineering , wideband , transmitter , handset , adjacent channel , adjacent channel power ratio , rfic , dbm , electronic engineering , engineering , rf power amplifier , channel (broadcasting)
An outphasing class-F power amplifier (PA) with Chireix architecture is presented in Global Foundry (GF) 0.13 µm Complementary Metal Oxide Semiconductor (CMOS) technology. The proposed circuit is composed of two branch class-F PA and Chireix power combiner with a floating load. The designed outphasing amplifier can provide 20.5 dBm output power from 1.8 V power supply at 3.5 GHz with 52.9 % power added efficiency (PAE). Wideband Code Division Multiple Access (W-CDMA) signal is implemented as input signal to simulate ACPR and the adjacent channel leakage ratios (ACLRs) at ± 5 MHz are -20.5 dBc/-20.7dBc. After DPD (Digital Pre-Distortion) ACLRs can achieve -44.5 dBc/-44.7dBc at ± 5 MHz. Furthermore, the chip area including testing pads is 1.98*1.62 mm 2 .