Open AccessComplete coverage of perovskite materials over ZnO Nanorods with Multiwalled Carbon Nanotubes (MWCNTs) as Hole Transport Material (HTM)
Author(s) -
Albertus Bramantyo,
Nji Raden Poespawati,
Arief Udhiarto,
Kenji Murakami,
Masayuki Okuya
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/715/1/012057
Subject(s) - nanorod , materials science , iodide , perovskite (structure) , chemical engineering , chemical bath deposition , deposition (geology) , layer (electronics) , nanotechnology , inorganic chemistry , thin film , chemistry , engineering , paleontology , sediment , biology
In this research, ZnO nanorods (NRs) have been fabricated for perovskite solar cell (PSC) application. An issue about the use of ZnO material for PSC application is lower photovoltaic outputs than TiO 2 material. Such outcome is due to unstable ZnO/perovskite interface. Other factor is due to partial coverage of the perovskite over the ZnO material. By using 1-step method and mixture of DMF and DMSO as the solvent for perovskite solution, complete coverage of the ZnO NR was achieved. Multiwalled carbon nanotubes (MWCNTs) and copper iodide (CuI) were used as hole transport materials (HTMs) for comparison purpose. The experiment and characterization were done in Shizuoka University, Hamamatsu campus, Japan. The ZnO NRs were grown by implementing 2-steps method of seed layer deposition by spin coating and NRs growth through chemical bath deposition. Methylammonium lead iodide (CH 3 NH 3 PbI 3 or MAPbI 3 ) perovskite was grown through 1-step method by mixing equimolar lead iodide (PbI 2 ) and methylammonium iodide (CH 3 NH 3 I or MAI) in DMF and DMSO solvents (volume ratio of 7 to 1 for DMF and DMSO, respectively). The current-voltage (I-V) curve for both materials showed higher J SC and V OC for MWCNTs at 5.34 mA/cm 2 and 0.21 V, respectively compared to CuI materials (J SC = 3.40 mA/cm 2 and V OC = 0.14 V). Lower V OC is the result of higher series resistance due to non-passivated ZnO/MAPbI3 interface. Another factor to consider is recombination of electron and hole at the interface. MWCNT material is an alternative material to act as HTM because of high conductivity and lower electrical resistance compared to CuI. Complete coverage of the perovskite over ZnO material helped improving the production of photogenerated electrons.