Open AccessStudying surface Fermi level pinning in GaP nanowires with gradient Kelvin probe microscopy
Author(s) -
Vladislav Sharov,
P. A. Alekseev,
Vladimir V. Fedorov,
A D Bolshakov,
I. S. Mukhin
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/699/1/012046
Subject(s) - kelvin probe force microscope , nanowire , condensed matter physics , work function , materials science , heterojunction , fermi level , substrate (aquarium) , band gap , nanotechnology , atomic force microscopy , physics , layer (electronics) , electron , oceanography , quantum mechanics , geology
In this work, we use scanning Kelvin probe gradient force microscopy to study surface Fermi level pinning in horizontal undoped nanowires with axial GaP/GaPAs heterojunction. The nanowires were separated from the growth substrate and dispersed on smooth surface of Ni/Si substrate. Then longitudinal and transverse surface potential profiles of several nanowires were captured. The study revealed a distinction between the work function of GaP and GaPAs regions. It was shown that the Fermi level in undoped GaP nanowires was pinned in the middle of the energy gap.