Open AccessDetermination of rate of epitaxial growth by means of combined usage of atomic force microscopy and light scattering data
Author(s) -
A. E. Rassadin
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/699/1/012039
Subject(s) - epitaxy , atomic force microscopy , scattering , cross section (physics) , growth rate , microscopy , process (computing) , materials science , light scattering , surface (topology) , rate equation , optics , chemistry , nanotechnology , physics , mathematics , computer science , classical mechanics , geometry , quantum mechanics , kinetics , layer (electronics) , operating system
In the paper, a method of experimental estimation of epitaxial growth rate has been suggested. A corner stone of this method is obtaining image of initial shape of solid state surface by means of atomic force microscopy before the start of the process of epitaxial growth. These experimental data should be completed by measurements of special bistatic cross-section of visible light scattering on the sample surface both before the beginning of technological process and after its end. Mathematical model of epitaxial growth is based on simplification of the Kardar-Parisi-Zhang equation. The method of characteristics has been applied to solve this equation.