Open AccessElectron beam processing of 6H-SiC substrate to obtain graphene-like carbon films
Author(s) -
E Yu Gusev,
Volodymyr Dudko,
Marina Avramenko,
M. P. Karmanov,
S. P. Avdeev,
A. S. Kolomiytsev,
О. А. Агеев
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/699/1/012017
Subject(s) - graphene , raman spectroscopy , materials science , substrate (aquarium) , electron beam induced deposition , cathode ray , carbon fibers , scanning electron microscope , fabrication , optoelectronics , electron , transmission electron microscopy , optics , nanotechnology , scanning transmission electron microscopy , physics , composite material , composite number , medicine , oceanography , alternative medicine , pathology , quantum mechanics , geology
We report on growth of graphene-like carbon films on 6H-SiC {0001} substrate by electron-beam. The processing was carried out on a specialized electron beam system with the Pierce electron gun. The D, G, and 2D peaks as well as D/G (0.2-0.9) and 2D/G (0.7-0.9) ratios are detected on processed samples by Raman spectroscopy. The prominent bands D, G, and 2D are located at 1350, 1584, and 2707 cm −1 , respectively. Atomic force microscopy showed that the average roughness lies in the range from 5 to 30 nm, and ten point height – from 40 to 200 nm. The results demonstrate that the electron-beam technique is appropriate to form graphene-like structures directly on 6H-SiC substrates and could be used for electronic device fabrication.