Open AccessInvestigation of resistive switching by non-stationary signals in ZrO2(Y) films by atomic force microscopy
Author(s) -
Д. О. Филатов,
М. Н. Коряжкина,
Д. А. Антонов,
И. Н. Антонов,
Dmitry Liskin,
M A Ryabova,
О. Н. Горшков
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/699/1/012012
Subject(s) - conductive atomic force microscopy , materials science , signal (programming language) , resistive touchscreen , electrical conductor , nanometre , electric field , voltage , optoelectronics , kelvin probe force microscope , piezoresponse force microscopy , dielectric , analytical chemistry (journal) , atomic force microscopy , nanotechnology , electrical engineering , chemistry , physics , composite material , ferroelectricity , computer science , engineering , chromatography , quantum mechanics , programming language
Resistive switching in the yttria stabilized zirconia films on the conductive substrates has been studied using Conductive Atomic Force Microscopy. Switching was performed by triangle voltage pulses with superimposed high-frequency sinusoidal signal applied between the probe and the sample. The performance of the resistive switching was characterized quantitatively by the ratio of the electric current flowing through the contact of the probe to the dielectric film surface (together constituting a nanometre-sized virtual memristor) in the low resistance state and in the high resistance one (ON/OFF ratio). The increase in this ratio when applying the sinusoidal signal as compared to the switching by the triangle pulses has been observed. Also, the long-time scale stability of the mean values of the probe current in both states was found to improve when applying the sinusoidal signal. The effect of the high frequency sinusoidal signal on the performance of the virtual memristor was attributed to the resonant activation of the oxygen ion migration via the oxygen vacancies by the alternating external electric field.