Open AccessAtomic force microscopy of titanium oxide nanostructures with forming-free resistive switching
Author(s) -
V. I. Avilov,
V. A. Smirnov,
R. V. Tominov,
N. A. Sharapov,
A. A. Avakyan,
V. V. Polyakova,
О. А. Агеев
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/699/1/012004
Subject(s) - nanostructure , resistive touchscreen , materials science , titanium , anode , titanium oxide , oxide , atomic force microscopy , nanotechnology , resistive random access memory , anodic oxidation , chemical engineering , electrode , optoelectronics , metallurgy , chemistry , electrical engineering , engineering
The paper presents the results of study of the resistive switching effect in titanium oxide nanostructures obtained by local anodic oxidation. It was shown that the resulting structures exhibited a forming-free resistive switching effect. Analysis of the current-time characteristics made it possible to obtain a resistance ratio in the HRS and LRS states of about 70. The formed LRS regions persisted for 75 days.