Open AccessA New High-speed Drive Topology of Wide-bandgap Power MOSFET Based on Dynamic Procedure Model
Author(s) -
Chuang Zhao,
Wenyong Guo,
Wenhan Zha,
Shuiyan Cao,
Benkang Yang,
Huijuan Gao,
Yang Cai,
Cuihua Tian
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/677/5/052065
Subject(s) - mosfet , topology (electrical circuits) , power (physics) , electronic engineering , computer science , power mosfet , key (lock) , simple (philosophy) , switching time , electrical engineering , engineering , transistor , voltage , physics , philosophy , computer security , epistemology , quantum mechanics
More and more attention is being drawn on the wide-bandgap power MOSFET, for its performance is far superior to the traditional silicon MOSFET. Driving technology is one of the key factors that influence the performance of device. In this paper, a high-speed drive circuit topology is proposed. The principle of the improved drive circuit is simple and easy to be implemented. Compared with the traditional design, it can reduce the switching time while maintaining the original driving performance.