Open AccessSequential deposition method of TiO2/CH3NH3PbI3 films for solar cell application
Author(s) -
Anne Esther Ribeiro Targino Pereira de Oliveira,
Fernando Bonatto,
Annelise Kopp Alves,
Cristiano Fragassa
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/659/1/012083
Subject(s) - materials science , nucleation , solar cell , perovskite solar cell , spin coating , band gap , chemical engineering , deposition (geology) , layer (electronics) , thin film , acicular , surface energy , substrate (aquarium) , perovskite (structure) , mineralogy , nanotechnology , composite material , optoelectronics , chemistry , organic chemistry , microstructure , paleontology , oceanography , sediment , geology , engineering , biology
Seeking to study innovative solar cell compositions with the goal to reach the highest energy efficiency level attainable, the aim of this study was to develop a route to obtain a solar cell composed by hybrid perovskite (CH 3 NH 3 PbI 3 ) using a sequential deposition method through the techniques of spin-coating and immersion. Initially, the deposition of PbI 2 thin film of was performed on a FTO/glass substrate coated with TiO 2 , which was subsequently converted into perovskite crystals through spin coating using a CH 3 NH 3 I solution. The influence of the PbI 2 layer thickness on the formation of CH 3 NH 3 PbI 3 crystals was evaluated. The hydrophilic characteristic of TiO 2 affects the distribution of the crystals nucleation sites, since PbI 2 possesses a non-polar liquid characteristic. The characterization of the perovskite thin films showed that thickness affects directly the bandgap and the surface morphology, revealing the presence of dendritic structures and acicular crystals. Both growth and coverage increased for thinner layers of PbI 2 . It was also possible to observe an increased uniformity in the film for smaller PbI 2 layers.