Open AccessSemiconductor generator of high voltage nanosecond pulses for plasma technologies
Author(s) -
S. V. Korotkov,
V. V. Smorodinov,
Yu. V. Aristov,
A. Bystrov,
A. L. Zhmodikov,
D. A. Korotkov
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/643/1/012081
Subject(s) - nanosecond , pulse generator , materials science , generator (circuit theory) , diode , voltage , electrical engineering , marx generator , insulated gate bipolar transistor , rise time , optoelectronics , capacitor , ignition system , high voltage , optics , engineering , laser , physics , power (physics) , quantum mechanics , aerospace engineering
A generator of nanosecond pulses is discussed in the paper. The main output parameters of the generator are as follows: the maximum output voltage amplitude is 20 kV, the output current strength is 300 A, the maximum frequency is 3 kHz, the output pulse rise time is 4 ns, the output pulse energy is 25 mJ. The generator is based on a current interrupter, which is an assembly of drift step recovery diodes (DSRD). Effective operation of the DSRD is provided by assemblies of IGBT-transistors connected in series, the operating voltage of each assembly is 4 kV. It is shown that the generator can be effectively used for purification of air from organic pollutants and for ignition of car spark-plugs.