Open AccessImproved IGBT Dynamic Model and Electro-Thermal-Mechanical Multi-Field Coupling Failure Analysis
Author(s) -
Jianbo Zhou,
Yigang He,
Jiacheng Liu,
Huadong Ni,
Zhangsheng Peng
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/631/2/022078
Subject(s) - materials science , soldering , insulated gate bipolar transistor , layer (electronics) , stress (linguistics) , junction temperature , coupling (piping) , composite material , electronic engineering , thermal , electrical engineering , voltage , engineering , linguistics , philosophy , physics , meteorology
Failure of insulated gate bipolar transistors (IGBTs) can make a serious impact on the entire rectification or inverter system. IGBTs are used in different practical applications, causing a large difference in the form of failure of its solder layer. Therefore, it is necessary to study the aging failure law of IGBT solder layer. Firstly, the improved IGBT dynamic model is used to build a three-phase rectifier circuit and correct its circuit power consumption error. Then constructing three-dimensional finite element model of IGBT and analyzing its chip temperature and solder layer stress distribution under electro-thermal-force multiphysics coupling. Finally, the randomly generated solder layer defects are used to investigate the effects of voids, cracks, etc. on solder layer failure, and the aging failure mechanism of the solder layer is obtained. The simulation results show that after the solder layer defect area ratio is higher than 15%, solder layer voids, cracks and shedding have a significant effect on chip junction temperature and solder layer stress. Among them, shedding and cracks have a greater influence on the stress of the solder layer.