Open AccessThe research of data retention of HfO2 as trapping layer: First-principles study
Author(s) -
Xianwei Jiang,
Feifei Wang,
Haibo Wang,
Jinlong Yang,
Shibin Lu
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/631/2/022055
Subject(s) - trapping , vacancy defect , doping , impurity , materials science , ab initio , charge (physics) , atomic physics , condensed matter physics , crystallography , chemistry , optoelectronics , physics , ecology , organic chemistry , quantum mechanics , biology
The influence of the Charge Trapping Memory storage feature was researched by doping the substitutional impurity Al and introducing oxygen vacancy within HfO 2 . Materials studio and Vienna Ab-initio Simulation Package were used to investigate the influence of doping Al on the formation of the oxygen vacancy in HfO 2 as trapping layer. At the same time, the interaction energy of two defects under different distances was calculated. The calculation results show that doping the substitutional impurity Al reduces the formation energy of oxygen vacancies in the HfO 2 , and the reduced formation energy of the three-fold-coordinated O vacancy is larger than that of the four-fold-coordinated O vacancy. After having studied three different defect distances between substitutional impurity Al and three-fold-coordinated O vacancy, the results indicate that the system acquires the largest charge trapping energy, the most quantum states when the distance of the defects is 2.107Å. As a conclusion, the data retention in the trapping layer of monoclinic HfO 2 can be improved by doping the substitutional impurity Al. This work will provide a theoretical guidance for the performance improvement with respect to the data retention of Charge Trapping Memory.