Open AccessBiocompatibility and surface properties of hydrogenated amorphous silicon-germanium thin films prepared by LF-PECVD
Author(s) -
Francisco López-Huerta,
Ricardo García,
Leandro García González,
Agustín L. HerreraMay,
Wilfrido Calleja Arriaga,
Rosario Vega,
Enrique Soto
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/628/1/012003
Subject(s) - materials science , plasma enhanced chemical vapor deposition , biocompatibility , amorphous solid , thin film , surface roughness , silicon , amorphous silicon , dorsal root ganglion , analytical chemistry (journal) , substrate (aquarium) , nanotechnology , optoelectronics , composite material , chemistry , crystalline silicon , crystallography , metallurgy , medicine , oceanography , dorsum , chromatography , geology , anatomy
We studied the surface morphology and biocompatibility of hydrogenated amorphous silicon-germanium (a-Si 1-x Ge x :H) thin films prepared by Low Frequency Plasma Enhanced Chemical Vapor Deposition (LF-PECVD). These films were deposited on a Corning 2947 glass substrate having a thickness of 3 μm, the electrical performance showed a decreased electrical resistance for low regime voltage. The root mean square (RMS) surface roughness of the films was measured by atomic force microscopy (AFM) in a non-contact mode. A biocompatibility tests was carried out using primary cultures of dorsal root ganglion (DRG) of Wistar rats. The DRG neurons were incubated for 18 hours on a-Si 1-x Ge x :H thin films, and subsequent electrophysiological recording was performed. These neurons displayed typical ionic currents, including a fast-inward current at the beginning of voltage clamp pulse (Na + current) and ensuing outward currents (K + current). In current clamp experiments, depolarizing current pulse injection caused typical action potential discharge of the neurons. These results confirmed the feasibility of using a-Si 1-x Ge x :H thin films as a biocompatible material.