Open AccessThe New Non-Volatile Based On STT-MRAM Lies in The Design and Implementation of High-Speed Cache of Magnetic Random Memory Material
Author(s) -
Tian Liu,
Wei Zhang,
Tao Xu,
Guan Wang
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/612/4/042070
Subject(s) - computer science , magnetoresistive random access memory , semiconductor memory , cache , non volatile memory , cpu cache , power consumption , non volatile random access memory , embedded system , cache pollution , key (lock) , computer memory , parallel computing , computer architecture , memory refresh , computer hardware , power (physics) , random access memory , cache algorithms , operating system , physics , quantum mechanics
With the development of semiconductor technology, the buffer of processor integration is getting larger and larger. The high-speed design of storage capacity of traditional memory devices has an important connection with cache. How to design new non-volatile magnetic random memory has become an important step. To solve these problems, researchers at home and abroad have discussed a large number of new non-volatile memory technologies, which have excellent characteristics such as non-volatility, low power consumption and high memory density. The key optimization techniques for the disadvantages of high write power, limited write life and long write latency of the new non-volatile memory are analyzed. Finally, the possible research directions of new non-volatile memory devices in future cache optimization are discussed.