Open AccessSimulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers
Author(s) -
Huatang Yuan,
Lin Li,
L. Zeng,
Jing Zhang,
Zaijin Li,
Yi Qu,
Xiang Ma,
Guojun Liu
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/592/1/012151
Subject(s) - optoelectronics , materials science , indium gallium arsenide , quantum well , gallium arsenide , laser , diode , indium , indium phosphide , optics , physics
InGaAs quantum wells with GaAs, AlGaAs and GaInP barriers have been simulated, respectively. The InGaAs/GaInP structure reveals a high material gain which could be nearly 1.4 times of that of InGaAs/GaAs. Threshold current of InGaAs/GaInP structure is less than half of InGaAs/AlGaAs. A high slope efficiency of 1.57 W/A from InGaAs/GaInP structure is observed with indium content as high as 0.35. InGaAs/GaInP structure will be the most appropriate candidate to fabricate a laser diode with high slope efficiency and low threshold current.