Open AccessRed Shift in Optical Properties of Type-I Al0.45Ga0.55As/GaAs0.84P0.16/Al0.45Ga0.55As Nano-heterostructure under External Strain
Author(s) -
Amit Rathi,
A.K. Singh,
Md. Riyaj,
S. Dalela,
P. A. Alvi
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/576/1/012036
Subject(s) - heterojunction , electronic band structure , condensed matter physics , hamiltonian (control theory) , materials science , wave function , band gap , diode , laser , optoelectronics , optics , atomic physics , physics , mathematical optimization , mathematics
The application of external pressure on a heterostructure produces changes in the lattice parameter and symmetry of the material. These in turn produce significant changes in the electronic bandstructure. Due to the application of external pressure energy gaps are altered. This paper reports the energy bandstructure, wavefunctions and optical gain in type-In-Al 0.45 Ga 0.55 As/GaAs 0.84 P 0.16 / p-Al 0.45 Ga 0.55 As nano-heterostructures under uniaxial strain (-1 to +1 GPa) along [110] directions in the red visible region. Numerical calculations of the photonic energy and optical gain of TE and TM modes in GaAsP/AlGaAs laser diode structure have been carried out for various uniaxial strain at temperature 300 K. The band structure was calculated using 6×6 Luttinger-Kohn Hamiltonian to determine sub-band dispersion and corresponding wavefunctions. The Heterostructure is observed to operate in the energy range 1.62 to 1.78 eV (696 to 765 nm).