Open AccessEpitaxial ZnO on p-Si and its MSM Structure Photoconductive Ultraviolet Detector
Author(s) -
Wen’an Zhong,
Jianfeng Liu,
Yu Zhao,
Quanlin Zhang,
Yupei Zhao,
Yuchao Wang
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/569/2/022019
Subject(s) - materials science , responsivity , optoelectronics , photoconductivity , molecular beam epitaxy , thin film , ultraviolet , schottky diode , epitaxy , detector , electron beam physical vapor deposition , silicon , semiconductor , dark current , evaporation , photodetector , optics , diode , nanotechnology , chemical vapor deposition , physics , layer (electronics) , thermodynamics
In this work, a plasma-assisted molecular-beam epitaxy (PA-MBE) was used to prepare high-quality ZnO thin films on p-type silicon substrates. Be/BeO composite buffer layers were designed to improve the crystal quality of ZnO thin films. Based on the ZnO thin films, we fabricated interdigitated electrode MSM structure photoconductive UV detector by lithography, electron beam evaporation and other traditional semiconductor processes. In addition, dark current, spectral response of the UV detector were measured by responsivity testing system to explore the application of ZnO based UV detectors.