Open AccessGrowth Mechanism of Continuous Monolayer MoS2 Prepared by Chemical Vapor Deposition
Author(s) -
Wenzhao Wang,
Xiangbin Zeng,
Zhenyu Guo,
Jia Ding,
Xiaoxiao Chen
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/562/1/012074
Subject(s) - monolayer , molybdenum disulfide , chemical vapor deposition , materials science , raman spectroscopy , scanning electron microscope , nanotechnology , photoluminescence , semiconductor , layer (electronics) , optoelectronics , chemical engineering , composite material , optics , physics , engineering
Molybdenum disulfide (MoS 2 ) is a cutting-edge layer-dependent two dimensional semiconductor which monolayer is direct-bandgap. Nano-scale monolayer MoS 2 has big potential in electronics and optoelectronics devices. In this work we reported the progress in growing continuous single layer MoS 2 by ambient pressure chemical vapor deposition (APCVD). Scanning electron microscope (SEM), Raman, photoluminescence spectra (PL) and atomic force microscopy (AFM) disclose that as-grown films are large-area monolayer and of high quality. SEM observations also clearly reveal the growth process of these films. Figuring out the growth mechanism grants growth of large scale continuous MoS 2 , and lays the foundation for wide device applications in the future.