Open AccessDesign and performance analysis of 6T SRAM cell on different CMOS technologies with stability characterization
Author(s) -
Shikha Saun,
Hemant Kumar
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/561/1/012093
Subject(s) - static random access memory , cmos , dissipation , dynamic demand , electronic engineering , power–delay product , chip , overhead (engineering) , power (physics) , noise margin , stability (learning theory) , computer science , transistor , engineering , voltage , electrical engineering , machine learning , adder , thermodynamics , physics , quantum mechanics