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The thermal conductivity of the variband crystals of the Bix-Sb1-x system in the semiconductor region of the composition at the temperature of about 100 K
Author(s) -
V. I. Bochegov,
N. А. Melnikov
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/544/1/012033
Subject(s) - semiconductor , composition (language) , thermal conductivity , atmospheric temperature range , antiparallel (mathematics) , conductivity , materials science , temperature gradient , analytical chemistry (journal) , crystal (programming language) , thermal , electrical resistivity and conductivity , chemistry , condensed matter physics , thermodynamics , physics , optoelectronics , composite material , linguistics , philosophy , chromatography , quantum mechanics , magnetic field , computer science , programming language
The previously observed experimental difference in the thermal conductivity of gradient-inhomogeneous (variband) single-crystal samples of the Bi x -Sb 1- x system in the case of parallel and antiparallel directions of the temperature gradients and composition in the semimetallic range of composition values (0.03 <x <0.10) under similar temperature conditions was also experimentally confirmed in other samples of this material having a composition in the interval of the semiconductor region (0.11 < x < 0.19). A theoretical model of the possible mechanism of this effect for the semiconductor region of the composition is proposed.

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