Open AccessSynthesis and characterization of SiC and CNT doped MgB2 superconducting wire
Author(s) -
Nofrijon Sofyan,
Moira Setiawan,
Satrio Herbirowo,
Agung Imaduddin
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/541/1/012055
Subject(s) - materials science , magnesium diboride , scanning electron microscope , dopant , doping , superconductivity , impurity , composite material , carbon nanotube , diffraction , nanoparticle , nanotechnology , condensed matter physics , optoelectronics , optics , chemistry , physics , critical current , organic chemistry
Silica nanoparticles and carbon nanotubes-doped magnesium diboride (MgB 2 ) superconducting wires have been successfully prepared via powder-in-tube (PIT) method. In this work, pure MgB 2 was doped using various dopants concentrations at 1 and 2 wt.% of each silica nanoparticles (SiC) and carbon nanotubes (CNT). The mix was sintered at 800°C for 3 hours before putting it in a 6 mm diameter stainless steel tube wire and drawn to get 3 mm diameter of stainless-steel wire. The materials were characterized using X-ray diffraction (XRD) for phase and structural analysis and scanning electron microscope (SEM) for surface morphology. Further, superconductivity characteristic of the wires was examined through a transition temperature using a cryogenic magnet. Structural characterization examined using Xray diffraction showed that no other impurities of other phases were detected. Microstructural investigation using electron microscope showed even distribution of the particles with inherent porosities. Measurement at cryogenic temperature showed that pure MgB 2 and 2 wt.% CNT doped MgB 2 showed superconductivity characteristic after being sintered whereas others showed unique resistivity behaviors. After deformation by drawing process to form wires, all of the samples showed a superconducting behavior, however, the presence of SiC and CNT decreased the critical temperature, Tc, of MgB 2 . Although the samples doped with CNT decrease the Tc, CNT doped samples showed higher Tc than that of MgB 2 /SiC wires.