Open AccessThe application of zinc oxide layer as ethylene sensor
Author(s) -
Amalia Sholehah,
D A Pusparasmi,
Brian Yuliarto
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/541/1/012051
Subject(s) - ethylene , annealing (glass) , materials science , zinc , hydrothermal circulation , layer (electronics) , chemical engineering , substrate (aquarium) , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , composite material , chromatography , metallurgy , organic chemistry , catalysis , oceanography , geology , engineering
As an emerging n -type semiconductor, ZnO has been widely applied in sensor area. In this study, we prepared an ethylene sensor using ZnO layer on FTO glass substrate. The seed layer was deposited using simple electrodeposition method using voltage of -1.1 V for 2 hours in cold bath (6°C). The ZnO layer was further grown using CBD technique at 90°C for 2 hours. In order to observe the effect of structural manipulation on the sensor performance, some of the ZnO layer samples were undergoing hydrothermal treatment at 100ºC for 1 hour under 1 bar N 2 gas. After annealing process, all ZnO layers were exposed with 50 ppm ethylene gas in closed chamber. Based on the results, it is shown that the optimum ZnO layer has been successfully identified the ethylene gas in concentration of 50 ppm, with response value of 2.40% at 200°C.