Open AccessFirst-principles study on electronic structure and photoelectric properties of zinc blende InxGa1-xN with different in doping concentrations
Author(s) -
Zongqing Tang,
J H Liu,
Y L Liu,
Hanwei He,
Yue Fu,
Xiaoming Shen
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/504/1/012080
Subject(s) - pseudopotential , doping , photoelectric effect , band gap , lattice constant , zinc , materials science , semiconductor , optoelectronics , density functional theory , condensed matter physics , electronic structure , wide bandgap semiconductor , absorption spectroscopy , absorption (acoustics) , electronic band structure , optics , diffraction , chemistry , physics , computational chemistry , metallurgy , composite material