Open AccessAnalysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects
Author(s) -
Aynul Islam,
K. Kálna
Publication year - 2019
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/504/1/012021
Subject(s) - silicon on insulator , mosfet , electron , nano , materials science , interface (matter) , condensed matter physics , optoelectronics , silicon , quantum , engineering physics , physics , electrical engineering , transistor , voltage , engineering , quantum mechanics , composite material , capillary number , capillary action